TR2013-045

A 40-dBm High Voltage Broadband GaN Class-J Power Amplifier for PoE Micro-Basestations

    •  Ma, R., Goswami, S., Yamanaka, K., Komatsuzaki, Y., Ohta, A., "A 40-dBm High Voltage Broadband GaN Class-J Power Amplifier for PoE Micro-Basestations", IEEE International Microwave Symposium (IMS), June 2013.
      BibTeX TR2013-045 PDF
      • @inproceedings{Ma2013jun,
      • author = {Ma, R. and Goswami, S. and Yamanaka, K. and Komatsuzaki, Y. and Ohta, A.},
      • title = {A 40-dBm High Voltage Broadband GaN Class-J Power Amplifier for PoE Micro-Basestations},
      • booktitle = {IEEE International Microwave Symposium (IMS)},
      • year = 2013,
      • month = jun,
      • url = {https://www.merl.com/publications/TR2013-045}
      • }
  • Research Area:

    Applied Physics

TR Image
Simulated load-pull contours of the safe regions of fundamental and second harmonic.
Abstract:

A broadband, efficient and linear RF power amplifier for 4G multi-standard micro-basestations is presented. With an optimized Class-J matching network and a new commercially available high voltage 10W GaN HEMT, output power around 40.5dBm is measured across 1.65-2.70GHz with 55-72% drain efficiency at 1-dB compression point under CW stimulus. Using a 20MHz modulated test signal at 2.5GHz with 9.5dB PAPR, high average efficiency of 48% was measured at 35.9dBm average output power, with ACPR better than -30dBc. To the author's best knowledge, this is the first Class-J prototype operating at 47V, enabling power over ethernet applications without any external voltage regulation, thereby further reducing bill of materials and improving the overall system efficiency.

 

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