TR2016-069

GaN HEMTs with Multi-functional p-Diamond Back-barriers

    •  Zhang, Y., Teo, K.H., Palacios, T., "GaN HEMTs with Multi-functional p-Diamond Back-barriers", IEEE International Symposium on Power Semiconductor Devices (ISPSD), DOI: 10.1109/​ISPSD.2016.7520789, June 2016, pp. 107-110.
      BibTeX TR2016-069 PDF
      • @inproceedings{Zhang2016jun,
      • author = {Zhang, Yuhao and Teo, Koon Hoo and Palacios, Tomas},
      • title = {GaN HEMTs with Multi-functional p-Diamond Back-barriers},
      • booktitle = {IEEE International Symposium on Power Semiconductor Devices (ISPSD)},
      • year = 2016,
      • pages = {107--110},
      • month = jun,
      • doi = {10.1109/ISPSD.2016.7520789},
      • url = {https://www.merl.com/publications/TR2016-069}
      • }
  • Research Area:

    Applied Physics

Abstract:

This work for the first time explores the use of p-diamond as multi-functional back-barriers in GaN high electron mobility transistors (HEMTs). A well-calibrated self-consistent electro-thermal simulation has revealed that multi-functional p-diamond back-barriers can improve the performance of HEMTs, by achieving over 3 times higher breakdown voltage (BV), at least 30% higher thermal performance, enhanced 2DEG confinement and reduced short channel effects. These results indicate the great potential of the integration of GaN and diamond electronics for high-power and high-frequency applications.