TR2017-005
3.0-3.6 GHz Wideband, over 46% Average Efficiency GaN Doherty Power Amplifier with Frequency Dependency Compensating Circuits
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- "3.0-3.6 GHz Wideband, over 46% Average Efficiency GaN Doherty Power Amplifier with Frequency Dependency Compensating Circuits", IEEE Radio Wireless Week (RWW), January 2017.BibTeX TR2017-005 PDF
- @article{Nakatani2017jan,
- author = {Nakatani, Keigo and Shinjo, Shintaro and Miwa, Shinichi and Ma, Rui and Yamanaka, Koji},
- title = {3.0-3.6 GHz Wideband, over 46% Average Efficiency GaN Doherty Power Amplifier with Frequency Dependency Compensating Circuits},
- journal = {IEEE Radio Wireless Week (RWW)},
- year = 2017,
- month = jan,
- url = {https://www.merl.com/publications/TR2017-005}
- }
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- "3.0-3.6 GHz Wideband, over 46% Average Efficiency GaN Doherty Power Amplifier with Frequency Dependency Compensating Circuits", IEEE Radio Wireless Week (RWW), January 2017.
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Research Area:
Abstract:
A wideband GaN Doherty power amplifier (DPA) for 4G/LTE-Advanced base stations is presented. To break the inherent narrow band limitation of conventional DPA, a frequency dependency compensating circuit and a modified /4 inverter incorporating package parasitic elements are proposed. Measured DPA achieves 45.9-50.2% drain efficiency with -50 dBc ACLR at 3.0-3.6 GHz under 20 MHz LTE signal after digital pre-distortion (DPD), which is very suitable for multiband radio and carrier aggregation in 4G. The use of the wideband efficient GaN DPA can reduce the complexity and energy consumption of radio, which further helps reducing the total cost of ownership (TCO) of base stations.
Related News & Events
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NEWS MERL's Power Amplifier Technologies featured in Mitsubishi Electric Corporation press release Date: January 12, 2017
Where: Tokyo, Japan
Research Areas: Communications, Electronic and Photonic DevicesBrief- Mitsubishi Electric Corporation and Mitsubishi Electric Research Laboratories (MERL) announced today the development of an ultra-wideband gallium nitride (GaN) Doherty power amplifier for next generation base stations that is compatible with a world-leading range (company estimate) of frequency bands above 3GHz to cover an operating bandwidth of 600MHz. The technology is expected to help reduce the size and energy consumption of next generation wireless base stations.
Please see the link below for the full Mitsubishi Electric press release text.
- Mitsubishi Electric Corporation and Mitsubishi Electric Research Laboratories (MERL) announced today the development of an ultra-wideband gallium nitride (GaN) Doherty power amplifier for next generation base stations that is compatible with a world-leading range (company estimate) of frequency bands above 3GHz to cover an operating bandwidth of 600MHz. The technology is expected to help reduce the size and energy consumption of next generation wireless base stations.