TR2017-152

Simulation of GaN HEMT with Wide-Linear-Range Transconductance

    •  Teo, K.H., Shi, J., "Simulation of GaN HEMT with Wide-Linear-Range Transconductance", IEEE Electron Devices and Solid-State Circuits Conference, DOI: 10.1109/​EDSSC.2017.8126442, October 2017.
      BibTeX TR2017-152 PDF
      • @inproceedings{Teo2017oct,
      • author = {Teo, Koon Hoo and Shi, Junxia},
      • title = {Simulation of GaN HEMT with Wide-Linear-Range Transconductance},
      • booktitle = {IEEE Electron Devices and Solid-State Circuits Conference},
      • year = 2017,
      • month = oct,
      • doi = {10.1109/EDSSC.2017.8126442},
      • url = {https://www.merl.com/publications/TR2017-152}
      • }
  • Research Area:

    Applied Physics

Abstract:

This paper presents a simulation study to achieve wide-linear-range transconductance of T-gate GaN HEMTs by introducing a o-doped layer and a p-GaN back barrier. With optimized o-doping density and location, the transconductance (gm) and current gain cutoff frequencies (fr) are ultra-flat and remain close to their peak values over a wide range of gatesource voltages (Vgs). In addition, a smaller absolute gm3 (thirdorder derivative of the Ids-Vgs curve) over a wide range of Vgs is obtained in proposed HEMTs. These features are valuable in designing highly linear RF AlGaN/GaN HEMTs.