TR2021-079
Compact modeling of gate leakage phenomenon in GaN HEMTs
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- , "Compact modeling of gate leakage phenomenon in GaN HEMTs", IEEE Transactions on Electron Devices, DOI: 10.23919/SISPAD49475.2020.9241666, June 2021.BibTeX TR2021-079 PDF
- @article{Li2021jun,
- author = {Li, Kexin and Yagyu, Eiji and Sato, Hisashi and Teo, Koon Hoo and Rakheja, Shaloo},
- title = {Compact modeling of gate leakage phenomenon in GaN HEMTs},
- journal = {IEEE Transactions on Electron Devices},
- year = 2021,
- month = jun,
- doi = {10.23919/SISPAD49475.2020.9241666},
- url = {https://www.merl.com/publications/TR2021-079}
- }
- , "Compact modeling of gate leakage phenomenon in GaN HEMTs", IEEE Transactions on Electron Devices, DOI: 10.23919/SISPAD49475.2020.9241666, June 2021.
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Research Areas:
Abstract:
In this paper, we provide a physical motivated compact model for AlGaN/GaN based High Electron Mobility Transistors (HEMTs). The device electrostatics and drain-source electron transport are modeled using previously published surface potential based I-V model for shortchannel III-Nitride HEMTs. The model presented here includes thermal emission (TE), trap-assisted tunneling (TAT), Poole Frenkel (PF) emission, and Fowler-Nordheim (FN) tunneling as the dominant sources of gate leakage. Excellent agreement between the model and fabricated AlGaN/GaN HEMTS with SiN passivation is demonstrated over a broad bias and temperature range between 298 K to 573 K.